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MITSUBISHI SEMICONDUCTOR
MGFS45A2527B
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
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FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz High power added efficiency P.A.E. = 40 % (TYP.) @ f=2.5 - 2.7GHz 3rd order IM distortion IM = -45dBc (TYP.) @ f=2.5 - 2.7GHz
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APPLICATION
item 01 : 2.5 - 2.7 GHz band power amplifier item 51 : 2.5 - 2.7 GHz band digital ratio communication

QUALITY GRADE
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RECOMMENDED BIAS CONDITIONS
VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm)

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(Ta=25deg.C) Ratings -20 -10 107 175 -65 / +175 Unit V V W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
Symbol Parameter
(Ta=25deg.C) Test conditions VDS = 3V , ID = 84mA Min. 44 11 -42 Limits Typ. Max. -5 45 12 7.5 40 -45 1.2 1.4 Unit V dBm dB A % dBc
deg.C/W
VGS(off) Gate to source cut-offivoltage P1dB Output power GLP Linear power gain ID Drain current P.A.E. Power added efficiency IM3 *2 3rd order IM distortion Rth(ch-c) *3 Thermal resistance *3 : Channel-case
VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz
delta Vf method
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.5,2.6,2.7GHz,delta f=5MHz
MITSUBISHI ELECTRIC
(1/6)
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June-'04
S-band 30W Power GaAs FET
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MITSUBISHI ELECTRIC CORPORATION
(2/6)
June-'04
50 45 40 35 Po (dBm P.A.E* )*@ *"*j i 30 25 20 15 10 5 0 15
f=2.5GHz Po(dBm) PAE(%) GAIN(dB)
18 17 16 15 Po (dBm P.A.E* )*@ *"*j i 14 Gp(dB) 13 12 11 10 9 8 40
50 45 40 35 30 25 20 15 10 5 0 15
f=2.6GHz Po(dBm) PAE(%) GAIN(dB)
18 17 16 15 14 Gp(dB) 13 12 11 10 9 8 40 Po (dBm P.A.E* )*@ *"*j i
50 45 40 35 30 25 20 15 10 5 0 15
f=2.7GHz Po(dBm) PAE(%) GAIN(dB)
18 17 16 15 14 13 12 11 10 9 8 40 Gp(dB)
20
25 30 Pin(dBm)
35
20
25 30 Pin(dBm)
35
20
25 30 Pin(dBm)
35
MITSUBISHI ELECTRIC CORPORATION
(3/6)
June-'04
S PARAMETERES(T=25deg.C,VDS=10V,ID=6.5A)
Freq
This S-Parameter data show measurements performed on each single-ended FET
MITSUBISHI ELECTRIC CORPORATION
(4/6)
14.5
Freqency VS GLP
45.5
Freqency VS P1dB
-51
Freqency VS IM3
14 45 13.5
-50
-49 IM3(dBC) "u =10(u)*h (e OFF*j "@ q =6.5( ) GLP(dB) 13 P1dB(dBm) 44.5
-48
12.5
44 -47
12 "u 11.5 =10(u)*h (e OFF*j "@ q =6.5( ) 43.5 "u =10(u)*h (e OFF*j "@ q =6.5( )
-46
11 2.4
2.5
2.6 Freq(GHz)
2.7
2.8
43 2.4
2.5
2.6 Freq(GHz)
2.7
2.8
-45 2.4 2.5 2.6 Freq(GHz) 2.7 2.8
MITSUBISHI ELECTRIC CORPORATION
(5/6)
June-'04
MITSUBISHI SEMICONDUCTOR
MGFS45A2527B
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC (6/6)
June-'04

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